Samsung will jointly produce Nvidia's next-generation custom HBM with TSMC, with the substrate chip manufactured using a 3nm process.

On October 18, according to Seoul Economic Daily, Samsung Electronics will adopt TSMC’s 3nm process to manufacture the core component Base Die in developing NVIDIA's next-generation custom high-bandwidth memory, NVHBM. NVIDIA also requires Samsung, SK Hynix, and Micron to uniformly adopt TSMC’s 3nm process for Base Dies and unify the Core Dies to the sixth-generation DRAM 1c process, thereby improving product consistency across different suppliers.

This marks the first time Samsung has collaborated with TSMC beginning at the HBM manufacturing stage. Previously, Samsung independently produced both the Core Dies and Base Dies for HBM; this time, it adjusts its integrated supply model in compliance with NVIDIA’s technical requirements. However, Samsung will continue to maintain its in-house foundry strategy for standard HBM and customized HBM for other clients such as AMD.